MOSGRAD-a tool for simulating the effects of systematic and random channel parameter variations
نویسندگان
چکیده
A CAD tool, MOSGRAD, that can be used to simulate the effects of distributed two-dimensional systematic and random variations in device parameters on the performance of matchingcritical circuits has been developed. In addition to applications for layouts with conventional rectangular transistors, this tool can predict the performance of non-conventional circuit structures in which multiple drain and/or source regions share a common channel region as well as predict the performance of nonconventional layouts that may incorporate nonrectangular transistors or segmented transistors.
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تاریخ انتشار 2001